1. Technology overview
Efficient Power Conversion (EPC) is a leader in enhancement-mode gallium nitride power transistors. In 2009, EPC introduced the first off-the-shelf monolithic enhancement-mode gallium-nitride-on-silicon eGaN FETs. EPC’s business objective is to be the dominant player in the power transistor market by producing GaN devices that switch faster, have a smaller footprint, and are available at a competitive cost. Proliferation of devices with these attributes enables new applications and accelerates the displacement of the aging silicon power MOSFET. The knowledge and experience gained by the Company in the commercialization of GaN technology can be leveraged to integrate both power and signal-level devices on the same substrate, resulting in monolithic power systems on a single chip.
2. Highlighted features & specifications
EPC9192 Class-D Audio Amplifiers
A reference design for Class-D audio amplifiers using EPC2307 eGaN FETs, enabling high power and efficiency.
EPC9193 GaN-based Inverter
A reference design for a 3-phase BLDC motor drive inverter using EPC2619 eGaN FETs, suitable for e-bikes, drones, and robotics.
Phase-16 Reliability Report
A report documenting GaN reliability and mission robustness, including test-to-fail methodology and guidelines for overvoltage specifications.
EPC2361 GaN FET
A 100 V, 1 mOhm GaN FET in a compact package, offering high power density for various applications including DC-DC conversion and fast charging.
GaN FETs for DC/DC Conversion
Reference designs featuring EPC GaN FETs and Analog Devices controllers, aimed at increasing efficiency and power density in DC/DC converters.
Laser Driver Boards
Evaluation boards featuring AEC-Q101 qualified GaN FETs for rapid transition in LiDAR systems, supporting currents up to 231 A.
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