Innoscience

Innoscience is a gallium-nitride (GaN) power semiconductor company founded on December 17, 2015 and listed on the Hong Kong Stock Exchange (02577.HK). The company operates two 8-inch GaN-on-silicon fabrication facilities, employs about 1,600 people including roughly 600 in R&D, and is expanding toward 70,000 wafers per month of capacity.

The product line spans GaN epitaxial wafers, discrete devices rated from 15V to 1200V, integrated power ICs and power modules, built on a proprietary p-GaN gate process with strain engineering. Applications include consumer electronics, automotive, data centers, renewable energy and industrial power systems, with a portfolio of over 1,100 granted and pending patents and cumulative shipments of about 2 billion GaN units.

1. GaN-on-Si process: proprietary p-GaN gate technology with strain engineering.

2. Discrete devices: voltage range from 15V to 1200V for varied power applications.

3. Integrated power ICs and power modules combining GaN with control circuitry.

4. Manufacturing scale: two 8-inch fabs, capacity expanding toward 70,000 wafers/month.

5. Applications: consumer electronics, automotive, data centers, renewable energy, industrial power.

6. IP portfolio: over 1,100 granted and pending patents; about 2 billion cumulative units shipped.