NextGO Epi

NextGO Epi is a deep-tech startup founded in 2025 as a spin-off from the Leibniz Institute for Crystal Growth (IKZ) in Berlin, Germany, developing gallium oxide (Ga2O3) epitaxial wafers for next-generation power semiconductor devices. The founding team, with more than ten years of combined experience in gallium oxide research, holds two international patents on the growth process.

The company grows Ga2O3 epitaxial layers up to four inches in diameter using metal-organic chemical vapor deposition, monitored by an in-house AI-based system that controls growth rate, doping and optical properties during production. Processed epiwafers are turned into power devices with industrial partners for applications in EV charging, renewable energy inverters, AI data centers and RF/photodetector systems.

1. Ga2O3 Epiwafers: Produces gallium oxide epitaxial wafers up to 4 inches for power semiconductor devices.

2. MOCVD Growth: Uses metal-organic chemical vapor deposition to grow the electrically active epitaxial layer.

3. AI-Powered Monitoring: Applies an in-situ, AI-based system to control doping and optical properties during growth.

4. Device Demonstration: Processes epiwafers into power devices with clean-room partners for reliability testing.

5. Target Applications: Serves EV charging, renewable energy, AI data center and RF/photodetector use cases.

6. Patented Process: Built on two international patents from over a decade of gallium oxide research.